First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering.

To solve the mobility balance issue in nanosheet FETs (NSFETs) and complementary FETs (CFETs), the aggressive approach using hetero-oriented integration with Ge channels was demonstrated by low temperature hetero-layer bonding technology (LT-HBT). Good manufacturability of the hetero-oriented Ge platform was verified with XRD 2θ-ω scan, Raman spectra, Selected Area Diffraction (SAD), and Converged Beam Electron Diffraction (CBED). Balanced device performance in terms of C-V, I D -V G , I D -V D and ρ c for Ge (111) nFET and Ge (100) pFET was achieved, leading to better VTCs and voltage gains.