Through-silicon-via material property variation impact on full-chip reliability and timing
Interconnect Technology Conference / Advanced Metallization Conference（2014）
摘要
We study the impact of material property variations in through-silicon-via (TSV) and its surrounding structures on the reliability and performance of 3D ICs. We focus on coefficient of thermal expansion (CTE) and Young's modulus variations for TSV, barrier, and liner materials. Our toolset efficiently handles the complexity of modeling and analysis of individual TSVs as well as full-chip 3D IC designs. This tool enables 3D IC designers to accurately assess and evaluate various methods to tolerate mechanical reliability and performance variations.
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关键词
young's modulus,integrated circuit design,integrated circuit modelling,integrated circuit reliability,thermal expansion,three-dimensional integrated circuits,cte,tsv,coefficient of thermal expansion,full-chip 3d ic designs,full-chip reliability,mechanical reliability,through-silicon-via material property variation,stress,reliability,thermal analysis,young s modulus
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