High-efficient carbon-doped InGaAs/AlGaAs/GaAs quantum well lasers

The carbon-doping behaviors of carbon tetrabromide (CBr4) in AlxGa1−xAs material system are studied by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). Doping level dependence on growth temperature, and V/III ratio is established. C-doped InGaAs/AlGaAs/GaAs separate confinement laser structure (∼940nm) are grown and demonstrated high quality with low-threshold current density. High-performance monolithic laser diode arrays are fabricated. A high slope efficiency of 1.17W/A and power efficiency of 62% are achieved, which is much better than the performance of Zn-doped structure of the same design. Therefore, carbon doping is demonstrated to have unique advantages over Zn-doping for high-power semiconductor laser applications.