Triple patterning aware routing and its comparison with double patterning aware routing in 14nm technology

DAC(2012)

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摘要
As technology continues to scale to 14nm node, Double Patterning Lithography (DPL) is pushed to near its limit. Triple Patterning Lithography (TPL) is a considerable and natural extension along the paradigm of DPL. With an extra mask to accommodate the features, TPL can be used to eliminate the unresolvable conflicts and minimize the number of stitches, which are pervasive in DPL process, and thus smoothen the layout decomposition step. Considering TPL during routing stage explores a larger solution space and can further improve the layout decomposability. In this paper, we propose the first triple patterning aware detailed routing scheme, and compare its performance with the double patterning version in 14nm node. Experimental results show that, using TPL, the conflicts can be resolved much more easily and the stitches can be significantly reduced in contrast to DPL.
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关键词
double patterning lithography,larger solution space,layout decomposability,network routing,circuit layout,triple patterning lithography,double patterning aware routing,triple patterning aware routing,aware routing,lithography,14nm technology,double patterning version,tpl,maze routing,size 14 nm,extra mask,natural extension,dpl process,layout decomposition step,patterning aware detailed routing,routing,computational modeling,layout,color
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